In Mordovia scientists have learned to grow artificial crystals of silicon carbide.
Protective suit, mask, special Shoe covers in the lab, complete silence as the key to future purity crystals of silicon carbide. Employees of the Mordovian University, neatly placed in the induction furnace a graphite cylinder.
Inside this cylinder is silicon carbide. While in powder form. A single crystal it will be at a temperature of more than 2 thousand degrees. The process is complex, the control is conducted for 70 parameters. The most important is the temperature. The growth cycle of a single crystal of about 7 days. A few hours later on a special substrate is formed a thin layer of silicon carbide. This is enough to produce simple devices such as LEDs. For power electronics need crystals with defined physical properties.
Over this now and work for laboratory staff. The technology of synthesis of silicon carbide crystals now possess only a few companies in the US and in Germany. At the same time for devices based on this semiconductor, the future of the entire world of electronics. Using the crystal of silicon carbide created a small transistor. The use of such in production will significantly reduce the weight and dimensions of the appliances. A year later Saransk scientists are ready to deliver the first shipment of crystals on the production line. Meanwhile, hone the technology. The device examines material on the impurity. The crystals created in the Mordovian University, clean enough. But scanner data is not yet as rosy, within the samples there are structural defects, but minor.
The experiments continue, but we can say that the Saransk scholars challenged the Silicon valley. After all, while the Americans produce more than 80% of the total global silicon carbide.
sections: Society, World News